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Contributors
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- By Agoston T. Agoston, Syed Z. Ali, Mahul B. Amin, Daniel A. Arber, Pedram Argani, Sylvia L. Asa, Rebecca N. Baergen, Zubair W. Baloch, Andrew M. Bellizzi, Kurt Benirschke, Allen Burke, Kenneth B. Calder, Karen L. Chang, Rebecca D. Chernock, Wang Cheung, Thomas V. Colby, Byron P. Croker, Ronald A. DeLellis, Edward F. DiCarlo, Ralph C. Eagle, Hormoz Ehya, Brett M. Elicker, Tarik M. Elsheikh, Robert E. Fechner, Linda D. Ferrell, Melina B. Flanagan, Douglas B. Flieder, Christopher S. Foster, Lillian Gaber, Karuna Garg, Kim R. Geisinger, Ryan M. Gill, Eric F. Glassy, David J. Glembocki, Zachary D. Goodman, Robert O. Greer, David J. Grignon, Gerardo E. Guiter, Kymberly A. Gyure, Ian S. Hagemann, Michael R. Henry, Jason L. Hornick, Ralph H. Hruban, Phyllis C. Huettner, Peter A. Humphrey, Olga B. Ioffe, Edward C. Klatt, Michael J. Klein, Ernest E. Lack, James N. Lampros, Lester J. Layfield, Robin D. LeGallo, Kevin O. Leslie, James S. Lewis, Virginia A. LiVolsi, Alberto M. Marchevsky, Anne Marie McNicol, Mitra Mehrad, Elizabeth Montgomery, Cesar A. Moran, Christopher A. Moskaluk, George J. Netto, G. Petur Nielsen, Robert D. Odze, Arthur S. Patchefsky, James W. Patterson, Elizabeth N. Pavlisko, John D. Pfeifer, Celeste N. Powers, Richard A. Prayson, Anja C. Roden, Victor L. Roggli, Andrew E. Rosenberg, Sherif Said, Margie A. Scott, Raja R. Seethala, Carlie S. Sigel, Jan F. Silverman, Bruce R. Smoller, Edward B. Stelow, Nora C. J. Sun, Mark W. Teague, Satish K. Tickoo, Thomas M. Ulbright, Paul E. Wakely, Jun Wang, Lawrence M. Weiss, Mark R. Wick, Howard H. Wu, Rhonda K. Yantiss, Charles Zaloudek, Yaxia Zhang, Xiaohui Sheila Zhao
- Edited by Mark R. Wick, University of Virginia, Virginia A. LiVolsi, University of Pennsylvania School of Medicine, John D. Pfeifer, Washington University School of Medicine, St Louis, Edward B. Stelow, University of Virginia, Paul E. Wakely, Jr
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- Book:
- Silverberg's Principles and Practice of Surgical Pathology and Cytopathology
- Published online:
- 13 March 2015
- Print publication:
- 26 March 2015, pp vii-x
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Contributors
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- By Mohamed Aboulghar, Ahmed Abou-Setta, Mary E. Abusief, G. David Adamson, R. J. Aitken, Hesham Al-Inany, Baris Ata, Hamdy Azab, Adam Balen, David H. Barad, Pedro N. Barri, C. Blockeel, Giuseppe Botta, Mark Bowman, Chris Brewer, Dominique M. Butawan, Sandra A. Carson, Hai Ying Chen, Anne Clark, Buenaventura Coroleu, S. Das, C. Dechanet, H. Déchaud, Cora de Klerk, Sheryl de Lacey, S. Deutsch-Bringer, P. Devroey, Didier Dewailly, Hakan E. Duran, Walid El Sherbiny, Tarek El-Toukhy, Johannes L. H. Evers, Cynthia Farquhar, Rodney D. Franklin, Juan A. Garcia-Velasco, David K. Gardner, Norbert Gleicher, Gedis Grudzinskas, Roger Hart, B Hédon, Colin M. Howles, Jack Yu Jen Huang, N. P. Johnson, Hey-Joo Kang, Gab Kovacs, Ben Kroon, Anver Kuliev, William H. Kutteh, Nick Macklon, Ragaa Mansour, Lamiya Mohiyiddeen, Lisa J. Moran, David Mortimer, Sharon T. Mortimer, Luciano G. Nardo, Robert J. Norman, Willem Ombelet, Luk Rombauts, Zev Rosenwaks, Francisco J. Ruiz Flores, Anthony J. Rutherford, Gavin Sacks, Denny Sakkas, M. W. Seif, Ayse Seyhan, Caroline Smith, Kate Stern, Elizabeth A. Sullivan, Sesh Kamal Sunkara, Seang Lin Tan, Mohamed Taranissi, Kelton P. Tremellen, Wendy S. Vitek, V. Vloeberghs, Bradley J. Van Voorhis, S. F. van Voorst, Amr Wahba, Yueping A. Wang, Klaus E. Wiemer
- Edited by Gab Kovacs, Monash University, Victoria
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- Book:
- How to Improve your ART Success Rates
- Published online:
- 05 July 2011
- Print publication:
- 30 June 2011, pp viii-xii
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Contributors
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- By Robert S. Albert, John Baer, Ronald A. Beghetto, Adam S. Bristol, John F. Cabra, Bonnie Cramond, Arthur Cropley, David Cropley, Gregory J. Feist, Julie A. Fiorelli, Liane Gabora, Elena L. Grigorenko, Kyung Hee Kim, Beth A. Hennessey, Allison B. Kaufman, James C. Kaufman, Scott Barry Kaufman, Yuliya Kolomyts, Sergey A. Kornilov, Aaron Kozbelt, Paul J. Locher, Todd Lubart, Matthew C. Makel, Seana Moran, Jonathan A. Plucker, Gerard J. Puccio, Ruth Richards, Mark A. Runco, Sandra W. Russ, R. Keith Sawyer, Paul J. Silvia, Dean Keith Simonton, Jeffrey K. Smith, Lisa F. Smith, Robert J. Sternberg, Mei Tan, Joyce VanTassel-Baska, Thomas B. Ward
- Edited by James C. Kaufman, California State University, San Bernardino, Robert J. Sternberg, Tufts University, Massachusetts
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- Book:
- The Cambridge Handbook of Creativity
- Published online:
- 05 June 2012
- Print publication:
- 23 August 2010, pp xi-xii
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Silicon-Carbon Alloys Synthesized by Electron Cyclotron Resonance Chemical Vapor Deposition
- Mark B. Moran, Linda F. Johnson
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- Journal:
- MRS Online Proceedings Library Archive / Volume 609 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, A23.2
- Print publication:
- 2000
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Silicon-carbon alloys were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) using either halogenated or non-halogenated precursors for the Si and C sources. Halogenated precursors were chosen for initial experiments to try to reduce the H content and to improve the microstructure of the silicon carbide (SiCx) films. While a wide range of compositions has been deposited using the halogenated precursors, only a limited range has been deposited so far with the non-halogenated precursors. Electron spectroscopy for chemical analysis (ESCA) and Fourier transform infrared (FTIR) spectroscopy show that compositions ranging from near-stoichiometric SiCx to extremely C-rich can be deposited by controlling the deposition temperature, plasma power and C/Si ratio of the halogenated precursors. At the highest C/Si-precursor ratio, the deposited film is electrically conductive with a measured resistivity of 0.067ω-cm, contains only 3-atomic-percent Si and should be considered a Si-doped carbon (C:Si) film. The excellent transparency, especially that of the C:Si films, allowed the assignment of FTIR absorption bands that are usually masked by graphitic inclusions and other impurities. A weak absorption band at 1180cm−1 was found to correlate with the electrical conductivity of the films and was attributed to the asymmetric “bond-and-a-half” Si=C stretch in a Si=C=C functional group where the pi electrons are distributed equally between the three atoms. Additional results show etching of the substrate by reactive Cl from the halogenated precursors can have a dramatic effect on the microstructure, porosity and moisture stability of the films. For experiments involving halogenated precursors, the C:Si films are much more stable than the near-stoichiometric SiCx because C:Si is deposited at lower plasma powers that do not etch the Si substrate. Finally, preliminary results show that near-stoichiometric SiCx films deposited using non-halogenated precursors are much more stable with respect to moisture incorporation than those deposited with halogenated precursors.